Spatially resolved multimode excitation for smooth supercontinuum generation in a SiN waveguide.

We propose a method of supercontinuum light generation enhanced by multimode excitation in a precisely dispersion-engineered deuterated SiN (SiN:D) waveguide. Although a regularly designed SiN-based nonlinear optical waveguide exhibits anomalous dispersion with the fundamental and first-order multimode operation, the center-symmetric light pumping at the input edge has so far inhibited the full potential of the nonlinearity of SiN-based materials. On the basis of numerical analysis and simulation for the SiN:D waveguide, we intentionally applied spatial position offsets to excite the fundamental and higher-order modes to realize bandwidth broadening with flatness. Using this method, we achieved an SNR improvement of up to 18 dB at a wavelength of 0.6 µm with an offset of about 1 µm in the Y-axis direction and found that the contribution was related to the presence of dispersive waves due to the excitation of TE10, and TE01 modes.

Heterogeneously integrated widely tunable laser using lattice filter and ring resonator on Si photonics platform.

We fabricated a tunable laser consisting of a Si lattice filter, a Si ring resonator, and a III-V gain region. The lattice filter, a cascade of interferometers with the same delay length, has periodic transmission peaks with a wide free spectral range (FSR). By connecting the lattice filter to a ring resonator with a narrow FSR, the lasing mode is selected from one of the resonance modes of the ring resonator. The lasing wavelength can be tuned by changing the transmission peak wavelength of the lattice filter, in which an integrated micro heater controls the refractive index of the longer or shorter arm. Since the length of the refractive index control region on both arms of the lattice filter can be extended while maintaining a wide FSR, a wide tuning range can be obtained. This laser facilitates the control of the lasing wavelength because of the simple configuration. The Si lattice filter and the Si ring resonator were fabricated on a Si photonics platform by a Si photonics foundry, and III-V gain region was heterogeneously integrated. The lasing wavelength is shifted to a longer (shorter) one by heating the longer (shorter) arm of the lattice filter, in which the tuning wavelength is 1529 to 1561 nm and side-mode suppression ratio is more than 40 dB. A Lorentzian linewidth for lasing wavelengths narrower than 40 kHz is also demonstrated.

Tapered self-written waveguide for a silicon photonic chip I/O.

An optical coupling method with high alignment tolerance by self-written waveguide (SWW) formation is a promising candidate for co-packaged optics (CPO) by silicon photonics (SiPh). However, conventional SWWs cannot be used with Si waveguides because visible light for SWW formation cannot radiate from the waveguide facet. Here, we devised a new, to the best of our knowledge, optical circuit with SiOxNy waveguides for SWW formation from an SiPh chip. With our circuit, we achieved optical coupling between an SiPh chip and a standard single-mode fiber (SSMF) with a tapered SWW (TSWW). The lowest excess coupling loss compared to butt coupling with a high-numerical aperture (NA) fiber is approximately 0.6 dB over the C-band with the TSWW. In addition, our coupling method has higher alignment tolerances than butt coupling with a high-NA fiber (HNF).

Direct f-3f self-referencing using an integrated silicon-nitride waveguide.

We have achieved the simultaneous generation of a 2.6-octave-wide supercontinuum (SC) spectrum over 400-2500 nm and third-harmonic light solely by a dispersion-controlled silicon-nitride waveguide (SiNW). To increase the visible intensity of the SC light component, we fabricated low-loss 5-mm-long deuterated SiNWs with spot-size converters by low-temperature deposition. We succeeded in measuring the carrier-envelope-offset (CEO) signal with a 34-dB signal-to-noise ratio because this short deuterated SiNW provides a large temporal overlap between the f and 3f components. In addition, we have demonstrated this method of CEO locking at telecommunications wavelengths with f-3f self-referencing generated solely by the SiNW without the use of highly nonlinear fiber and an additional nonlinear crystal. Compared with the method of CEO locking with a highly nonlinear fiber and a standard f-2f self-referencing interferometer, this method is not only simple and compact but also stable.

Optical links on silicon photonic chips using ultralow-power consumption photonic-crystal lasers.

Ultrashort-distance optical interconnects are becoming increasingly important due to continuous improvements in servers and high-performance computers. As light sources in such interconnects, directly modulated semiconductor lasers with an ultrasmall active region are promising. In addition, using Si waveguides is important to provide low loss optical links with functions such as wavelength filtering and switching. In this paper, we demonstrate a wafer-scale heterogeneous integration of lambda-scale embedded active-region photonic-crystal (LEAP) lasers and Si waveguides, achieved through precise alignment. We numerically and experimentally demonstrated the coupling design between the LEAP lasers and Si waveguides; it is important to match propagation constants of Si waveguides and wavenumber of the optical cavity modes. The LEAP lasers exhibit an ultralow threshold current of 13.2-µA and 10-Gbit/s direct modulation. We also achieved the first data transmission using an optical link consisting of a LEAP laser, Si waveguide, and photodetector and obtained an averaged eye diagram at a bit rate of 10 Gbit/s with a bias current of 150 µA.

Integration of a high-efficiency Mach-Zehnder modulator with a DFB laser using membrane InP-based devices on a Si photonics platform.

We demonstrate a wafer-level integration of a distributed feedback laser diode (DFB LD) and high-efficiency Mach-Zehnder modulator (MZM) using InGaAsP phase shifters on Si waveguide circuits. The key to integrating materials with different bandgaps is to combine direct wafer bonding of a multiple quantum well layer for the DFB LD and regrowth of a bulk layer for the phase shifter. Buried regrowth of an InP layer is also employed to define the waveguide cores for the LD and phase shifters on a Si substrate. Both the LD and phase shifters have 230-nm-thick lateral diodes, whose thickness is less than the critical thickness of the III-V compound semiconductor layers on the Si substrate. The fabricated device has a 500-µm-long DFB LD and 500-µm-long carrier-depletion InGaAsP-bulk phase shifters, which provide a total footprint of only 1.9 × 0.31 mm2. Thanks to the low losses of the silica-based fiber couplers, InP/Si narrow tapers, and the phase shifters, the fiber-coupled output power of 3.2 mW is achieved with the LD current of 80 mA. The MZM has a VπL of around 0.4 Vcm, which overcomes the VπL limit of typical carrier-depletion Si MZMs. Thanks to the high modulation efficiency, the device shows an extinction ratio of 5 dB for 50-Gbit/s NRZ signal with a low peak-to-peak voltage of 2.5 V, despite the short phase shifters and single-arm driving.

Membrane buried-heterostructure DFB laser with an optically coupled III-V/Si waveguide.

We have developed a membrane buried-heterostructure (BH) distributed feedback (DFB) laser consisting of an optically coupled III-V/Si waveguide and SiN surface grating. A 230-nm-thick membrane III-V layer enables us to construct an optical supermode in a 220-nm-thick Si waveguide and control the optical confinement factor in both the III-V and Si layers by changing Si waveguide width. This makes it possible to use a conventional Si photonics platform because the Si waveguides widely used on it are around 220-nm thick. To fabricate the BH-the key component for constructing a membrane laser with a lateral current-injection structure-we used direct wafer bonding and regrowth by metalorganic vapor phase epitaxy. Light output from the DFB laser is transferred to the Si waveguide through a short inverse-taper InP waveguide. A fiber-chip interface constructed by using inverse-taper Si waveguides and SiOx waveguides provides 2-dB fiber coupling loss. Fiber coupling power of 7.9 mW is obtained with a λ/4-shifted DFB laser with a 500-µm-long cavity. Single-mode lasing with a side-mode suppression ratio of 50 dB and lasing up to 120°C are also demonstrated.

Evaluation of graphene optical nonlinearity with photon-pair generation in graphene-on-silicon waveguides.

We evaluate the nonlinear coefficient of graphene-on-silicon waveguides through the coincidence measurement of photon-pairs generated via spontaneous four-wave mixing. We observed the temporal correlation of the photon-pairs from the waveguides over various transfer layouts of graphene sheets. A simple analysis of the experimental results using coupled-wave equations revealed that the atomically-thin graphene sheets enhanced the nonlinearity of silicon waveguides up to ten-fold. The results indicate that the purely χ (3)-based effective nonlinear refractive index of graphene is on the order of 10-13 m 2/W, and provide important insights for applications of graphene-based nonlinear optics in on-chip nanophotonics.

Dopamine detection on activated reaction field consisting of graphene-integrated silicon photonic cavity.

Graphene is widely recognized as an outstanding and multi-functional material in various application fields such as electronics, photonics, mechanics, and life sciences. We propose a neurotransmitter sensor with ultra-small volume for detecting the photonic light-matter response. Such detection can be achieved using surface-activated monolayer graphene sheets and CMOS-compatible silicon-photonic circuits. Patterned pieces of CVD-grown graphene are integrated on the top of a silicon micro-ring resonator, which induce the adsorption of catecholamine molecules originated from the π-stacking effect. We used dopamine to demonstrate such detection and examine the sensitivity of graphene-dopamine coupling. To avoid high optical insertion loss and degradation of resonance characteristics caused by a graphene's extremely high optical absorption coefficient in the near infrared region, a ring resonator with adjusted coupling design is used to compensate for the drawbacks. Owing to the advanced nano-sensing platform and measurement system, an activated graphene-sensing surface of only ∼30 µm2/ch enables π coupling to dopamine with enough sensitivity to detect less than 10-µM solution concentration. The detection mechanism through the surface reaction is also verified by optical simulation and atomic force microscopy measurement, revealing that the flowing dopamine molecules can only occupy the outermost surface of graphene. We expect this sensor to contribute to the development of an innovative label-free and disposable bio-sensing platform with accurate, sensitive, and fast response.

Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform.

A high-efficiency InGaAsP Mach-Zehnder modulator is integrated with hydrogen-free deuterated silicon nitride (SiN:D) waveguide circuits on a Si substrate. A thin InP-based layer provides a high optical confinement factor of around 50% and enables easy optical coupling to the SiN:D waveguides, which are fabricated by a low-temperature backend process. The fabricated Mach-Zehnder modulator with a 300-µm-long phase shifter shows a VπL of 0.4 Vcm, insertion loss of ~4.5 dB, and an error-free operation for 40-Gbit/s non-return-to-zero signal.

A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer.

A new materials group to implement dense wavelength division multiplexing (DWDM) in Si photonics is proposed. A large thermo-optic (TO) coefficient of Si malfunctions multiplexer/demultiplexer (MUX/DEMUX) on a chip under thermal fluctuation, and thus DWDM implementation, has been one of the most challenging targets in Si photonics. The present study specifies an optical materials group for DWDM by a systematic survey of their TO coefficients and refractive indices. The group is classified as mid-index contrast optics (MiDex) materials, and non-stoichiometric silicon nitride (SiNx) is chosen to demonstrate its significant thermal stability. The TO coefficient of non-stoichiometric SiNx is precisely measured in the temperature range 24-76 °C using the SiNx rings prepared by two methods: chemical vapor deposition (CVD) and physical vapor deposition (PVD). The CVD-SiNx ring reveals nearly the same TO coefficient reported for stoichiometric CVD-Si3N4, while the value for the PVD-SiNx ring is slightly higher. Both SiNx rings lock their resonance frequencies within 100 GHz in this temperature range. Since CVD-SiNx needs a high temperature annealing to reduce N-H bond absorption, it is concluded that PVD-SiNx is suited as a MiDex material introduced in the CMOS back-end-of-line. Further stabilization is required, considering the crosstalk between two channels; a 'silicone' polymer is employed to compensate for the temperature fluctuation using its negative TO coefficient, called athermalization. This demonstrates that the resonance of these SiNx rings is locked within 50 GHz at the same temperature range in the wavelength range 1460-1620 nm (the so-called S, C, and L bands in optical fiber communication networks). A further survey on the MiDex materials strongly suggests that Al2O3, Ga2O3 Ta2O5, HfO2 and their alloys should provide even more stable platforms for DWDM implementation in MiDex photonics. It is discussed that the MiDex photonics will find various applications such as medical and environmental sensing and in-vehicle data-communication.

Optical nonlinearity enhancement with graphene-decorated silicon waveguides.

Broadband on-chip optical frequency combs (OFCs) are important for expanding the functionality of photonic integrated circuits. Here, we demonstrate a huge local optical nonlinearity enhancement using graphene. A waveguide is decorated with graphene by precisely manipulating graphene's area and position. Our approach simultaneously achieves both an extremely efficient supercontinuum and ultra-short pulse generation. With our graphene-decorated silicon waveguide (G-SWG), we have achieved enhanced spectral broadening of femtosecond pump pulses, along with an eightfold increase in the output optical intensity at a wavelength approximately 200 nm shorter than that of the pump pulses. We also found that this huge nonlinearity works as a compressor that effectively compresses pulse width from 80 to 15.7 fs. Our results clearly show the potential for our G-SWG to greatly boost the speed and capacity of future communications with lower power consumption, and our method will further decrease the required pump laser power because it can be applied to decorate various kinds of waveguides with various two-dimensional materials.

Membrane distributed-reflector laser integrated with SiOx-based spot-size converter on Si substrate.

We demonstrate monolithic integration of a 50-µm-long-cavity membrane distributed-reflector laser with a spot-size converter, consisting of a tapered InP wire waveguide and an SiOx waveguide, on SiO2/Si substrate. The device exhibits 9.4-GHz/mA0.5 modulation efficiency with a 2.2-dB fiber coupling loss. We demonstrate 25.8-Gbit/s direct modulation with a bias current of 2.5 mA, resulting in a low energy cost of 132 fJ/bit.

On-chip generation and demultiplexing of quantum correlated photons using a silicon-silica monolithic photonic integration platform.

We demonstrate the generation and demultiplexing of quantum correlated photons on a monolithic photonic chip composed of silicon and silica-based waveguides. Photon pairs generated in a nonlinear silicon waveguide are successfully separated into two optical channels of an arrayed-waveguide grating fabricated on a silica-based waveguide platform.

High-performance silicon photonics technology for telecommunications applications.

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

Demonstration of 12.5-Gbps optical interconnects integrated with lasers, optical splitters, optical modulators and photodetectors on a single silicon substrate.

One of the most serious issues in information industries is the bandwidth bottleneck in inter-chip interconnects. We propose a photonics-electronics convergence system to solve this issue. We fabricated a high density optical interposer to demonstrate the feasibility of the system by using silicon photonics integrated with an arrayed laser diode, an optical splitter, silicon optical modulators, germanium photodetectors, and silicon optical waveguides on a single silicon substrate. Error-free data transmission at 12.5 Gbps and a transmission density of 6.6 Tbps/cm2 were achieved with the optical interposer. We believe this technology will solve the bandwidth bottleneck problem in the future.

A monolithically integrated polarization entangled photon pair source on a silicon chip.

Integrated photonic circuits are one of the most promising platforms for large-scale photonic quantum information systems due to their small physical size and stable interferometers with near-perfect lateral-mode overlaps. Since many quantum information protocols are based on qubits defined by the polarization of photons, we must develop integrated building blocks to generate, manipulate, and measure the polarization-encoded quantum state on a chip. The generation unit is particularly important. Here we show the first integrated polarization-entangled photon pair source on a chip. We have implemented the source as a simple and stable silicon-on-insulator photonic circuit that generates an entangled state with 91 ± 2% fidelity. The source is equipped with versatile interfaces for silica-on-silicon or other types of waveguide platforms that accommodate the polarization manipulation and projection devices as well as pump light sources. Therefore, we are ready for the full-scale implementation of photonic quantum information systems on a chip.

Single silicon wire waveguide based delay line interferometer for DPSK demodulation.

We experimentally demonstrate a high-quality phase shift keying demodulator based on a silicon photonic wire waveguide. Since the birefringence of the waveguide generates extremely huge differential group delay, an ultra-compact and high-extinction-ratio delay line interferometer is devised in TE and TM modes. We firstly calculated and simulated the requirements for propagation length and waveguide's dimensions. Then, we measured the interference spectrum, eye pattern, bit error rate, and temperature dependence to ascertain its feasibility for DPSK demodulation. For a 2.8 cm-long wire waveguide, a free spectral range of 9.6 GHz and an error-free DPSK demodulation around 10 Gb/s are obtained.

Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.

On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.

First demonstration of high density optical interconnects integrated with lasers, optical modulators, and photodetectors on single silicon substrate.

Engineers are currently facing some technical issues in support of the exponential performance growths in information industries. One of the most serious issues is a bottleneck of inter-chip interconnects. We propose a new "Photonics-Electronics Convergence System" concept. High density optical interconnects integrated with a 13-channel arrayed laser diode, silicon optical modulators, germanium photodetectors, and silicon optical waveguides on single silicon substrate were demonstrated for the first time using this system. A 5-Gbps error free data transmission and a 3.5-Tbps/cm(2) transmission density were achieved. We believe that this technology will solve the bandwidth bottleneck problem among LSI chips in the future.